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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N and P-Channel
- Radyasyon Dayanımı
- No
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain To Source Breakdown Voltage
- 200V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- RoHS Durumu
- ROHS3 Compliant
- Continuous Drain Current Id
- 2A
- Input Capacitance Ciss Max Vds
- 110pF @ 25V
- Ambalaj
- Tape & Reel (TR)
- Weight
- 84.99187mg
- Rise Time
- 15ns
- Terminal Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- 40
- Fall Time Typ
- 15 ns
- Genişlik
- 3.9mm
- Rds On Max Id Vgs
- 7 Ω @ 1A, 10V
- Terminal Pozisyonu
- DUAL
- Additional Feature
- LOW THRESHOLD
- Yükseklik
- 1.65mm
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 8
- Gate To Source Voltage Vgs
- 20V
- Number Of Channels
- 2
- Uzunluk
- 4.9mm
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Active
- JESD-609 Kodu
- e3
- Fet Feature
- Standard
- Vgsth Max Id
- 2V @ 1mA
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 3 Weeks
- Contact Plating
- Tin
- Turn On Delay Time
- 10 ns
- Drainsource On Resistancemax
- 7Ohm
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