MSCSM70VM10C4AG

Specifications

Technology

SiC

RoHS

Details

Rise Time

35 ns

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Paket

Tube

Pd Power Dissipation

674 W

Vgs Gatesource Voltage

- 10 V, 25 V

Id Continuous Drain Current

238 A

Montaj Stili

Screw Mount

Fet Type

2 N Channel (Phase Leg)

Rds On Drainsource Resistance

9.5 mOhms

Input Capacitance Ciss Max Vds

9000pF @ 700V

Ambalaj

Bulk

Vgsth Max Id

2.4V @ 8mA

Ürün Durumu

Active

Ürün Tipi

Discrete Semiconductor Modules

Drain To Source Voltage Vdss

700V

Vgs Th Gatesource Threshold Voltage

1.9 V

Gate Charge Qg Max Vgs

430nC @ 20V

Montaj Tipi

Chassis Mount

Vds Drainsource Breakdown Voltage

700 V

Fabrika Paket Adedi

1

Typical Turnoff Delay Time

50 ns

Tip

Phase Leg

Kılıf / Paket

Module

Vf Forward Voltage

1.5 V at 100 A

Maks. Çalışma Sıcaklığı

+ 125 C

Temel Ürün No

MSCSM70

Tedarikçi Cihaz Paketi

SP4

Typical Turnon Delay Time

40 ns

Fet Feature

Silicon Carbide (SiC)

Minimum Operating Temperature

- 40 C

Transistor Polarity

N-Channel

Rds On Max Id Vgs

9.5mOhm @ 80A, 20V

Power Max

674W (Tc)

Current Continuous Drain Id25

238A (Tc)

Vr Reverse Voltage

700 V