Volume pricing
- 1+ pcs$118.44
- 10+ pcs$111.74
- 100+ pcs$105.42
- 500+ pcs$99.45
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 9.5mOhm @ 80A, 20V
- Transistor Polarity
- N-Channel
- Minimum Operating Temperature
- - 40 C
- Current Continuous Drain Id25
- 241A (Tc)
- Configuration
- Dual
- Power Max
- 690W (Tc)
- Typical Turnoff Delay Time
- 50 ns
- Fabrika Paket Adedi
- 1
- Vds Drainsource Breakdown Voltage
- 700 V
- Gate Charge Qg Max Vgs
- 430nC @ 20V
- Montaj Tipi
- Chassis Mount
- Typical Turnon Delay Time
- 40 ns
- Fet Feature
- Silicon Carbide (SiC)
- Maks. Çalışma Sıcaklığı
- + 175 C
- Kılıf / Paket
- Module
- Tip
- Phase Leg SiC MOSFET Power Module
- Input Capacitance Ciss Max Vds
- 9000pF @ 700V
- Vgs Th Gatesource Threshold Voltage
- 1.9 V
- Ürün Tipi
- Discrete Semiconductor Modules
- Drain To Source Voltage Vdss
- 700V
- Ürün Durumu
- Active
- Vgsth Max Id
- 2.4V @ 8mA
- Vgs Gatesource Voltage
- - 10 V, 23 V
- Id Continuous Drain Current
- 241 A
- Pd Power Dissipation
- 690 W
- Paket
- Bulk
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Rise Time
- 40 ns
- RoHS
- Details
- Technology
- SiC
- Rds On Drainsource Resistance
- 9.5 mOhms
- Fet Type
- 2 N Channel (Phase Leg)
- Montaj Stili
- Screw Mounts
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