Volume pricing
- 1+ pcs$570.64
- 10+ pcs$538.34
- 100+ pcs$507.87
- 500+ pcs$479.12
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rise Time
- 125 ns
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Technology
- SiC
- RoHS
- Details
- Vgs Gatesource Voltage
- - 10 V, 23 V
- Id Continuous Drain Current
- 689 A
- Paket
- Bulk
- Pd Power Dissipation
- 1.882 kW
- Fet Type
- 2 N Channel (Phase Leg)
- Montaj Stili
- Screw Mounts
- Rds On Drainsource Resistance
- 3.2 mOhms
- Input Capacitance Ciss Max Vds
- 27000pF @ 700V
- Vgsth Max Id
- 2.4V @ 24mA
- Ürün Tipi
- Discrete Semiconductor Modules
- Drain To Source Voltage Vdss
- 700V
- Vgs Th Gatesource Threshold Voltage
- 1.9 V
- Ürün Durumu
- Active
- Fabrika Paket Adedi
- 1
- Montaj Tipi
- Chassis Mount
- Gate Charge Qg Max Vgs
- 1290nC @ 20V
- Vds Drainsource Breakdown Voltage
- 700 V
- Typical Turnoff Delay Time
- 214 ns
- Tip
- Phase Leg SiC MOSFET Power Module
- Typical Turnon Delay Time
- 78 ns
- Fet Feature
- Silicon Carbide (SiC)
- Maks. Çalışma Sıcaklığı
- + 175 C
- Kılıf / Paket
- Module
- Minimum Operating Temperature
- - 40 C
- Rds On Max Id Vgs
- 3.2mOhm @ 240A, 20V
- Transistor Polarity
- N-Channel
- Current Continuous Drain Id25
- 689A (Tc)
- Power Max
- 1.882kW (Tc)
- Configuration
- Dual
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