MSCSM70AM025D3AG

Specifications

Vgsth Max Id

2.4V @ 24mA

Ürün Durumu

Active

Vgs Th Gatesource Threshold Voltage

1.9 V

Drain To Source Voltage Vdss

700V

Ürün Tipi

Discrete Semiconductor Modules

Input Capacitance Ciss Max Vds

27000pF @ 700V

Montaj Stili

Screw Mounts

Fet Type

2 N Channel (Phase Leg)

Rds On Drainsource Resistance

3.2 mOhms

Technology

SiC

RoHS

Details

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Rise Time

125 ns

Pd Power Dissipation

1.882 kW

Paket

Bulk

Id Continuous Drain Current

689 A

Vgs Gatesource Voltage

- 10 V, 23 V

Configuration

Dual

Power Max

1.882kW (Tc)

Current Continuous Drain Id25

689A (Tc)

Minimum Operating Temperature

- 40 C

Transistor Polarity

N-Channel

Rds On Max Id Vgs

3.2mOhm @ 240A, 20V

Tip

Phase Leg SiC Power Module

Kılıf / Paket

Module

Maks. Çalışma Sıcaklığı

+ 175 C

Typical Turnon Delay Time

78 ns

Fet Feature

Silicon Carbide (SiC)

Vds Drainsource Breakdown Voltage

700 V

Montaj Tipi

Chassis Mount

Gate Charge Qg Max Vgs

1290nC @ 20V

Fabrika Paket Adedi

1

Typical Turnoff Delay Time

214 ns