Volume pricing
- 1+ pcs$528.24
- 10+ pcs$498.34
- 100+ pcs$470.13
- 500+ pcs$443.52
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 3.2V @ 5mA
- Ürün Tipi
- Discrete Semiconductor Modules
- Drain To Source Voltage Vdss
- 1700V (1.7kV)
- Vgs Th Gatesource Threshold Voltage
- 1.8 V
- Ürün Durumu
- Active
- Input Capacitance Ciss Max Vds
- 6600pF @ 1000V
- Fet Type
- 6 N-Channel (Phase Leg)
- Montaj Stili
- SMD/SMT
- Rds On Drainsource Resistance
- 17.5 mOhms
- Rise Time
- 17 ns
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Technology
- Si
- Id Continuous Drain Current
- 122 A
- Vgs Gatesource Voltage
- - 10 V, 23 V
- Paket
- Bulk
- Pd Power Dissipation
- 588 W
- Current Continuous Drain Id25
- 122A (Tc)
- Power Max
- 588W (Tc)
- Minimum Operating Temperature
- - 40 C
- Rds On Max Id Vgs
- 22.5mOhm @ 60A, 20V
- Temel Ürün No
- MSCSM170
- Fet Feature
- Silicon Carbide (SiC)
- Typical Turnon Delay Time
- 24 ns
- Maks. Çalışma Sıcaklığı
- + 175 C
- Vf Forward Voltage
- 1.5 V
- Kılıf / Paket
- Module
- Fabrika Paket Adedi
- 1
- Montaj Tipi
- Chassis Mount
- Gate Charge Qg Max Vgs
- 356nC @ 20V
- Vds Drainsource Breakdown Voltage
- 1.7 kV
- Typical Turnoff Delay Time
- 35 ns
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