MSCSM170AM029CT6LIAG

Specifications

Drain To Source Voltage Vdss

1700V (1.7kV)

Rise Time

52 ns

Pd Power Dissipation

3000 W

Vds Drainsource Breakdown Voltage

1.7 kV

Continuous Drain Current Id

676

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Typical Turnon Delay Time

65 ns

Gate Charge Qg Max Vgs

2136nC @ 20V

Temel Ürün No

MSCSM170

Fet Type

2 N Channel (Phase Leg)

Power Max

3kW (Tc)

Technology

Si

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 175 C

Vgs Gatesource Voltage

- 10 V, 23 V

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

3.3V @ 30mA

Montaj Stili

SMD/SMT

Id Continuous Drain Current

676 A

Minimum Operating Temperature

- 40 C

Power Dissipation

3

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

2.9 mOhms

Typical Turnoff Delay Time

148 ns

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Current Continuous Drain Id25

676A (Tc)

Vgs Th Gatesource Threshold Voltage

1.8 V

Vf Forward Voltage

1.5 V

Rds On Max Id Vgs

3.75mOhm @ 360A, 20V

Fet Feature

Silicon Carbide (SiC)

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

39600pF @ 1000V