Volume pricing
- 1+ pcs$277.65
- 10+ pcs$261.94
- 100+ pcs$247.11
- 500+ pcs$233.12
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Paket
- Bulk
- Maks. Çalışma Sıcaklığı
- + 175 C
- Vgs Gatesource Voltage
- - 10 V, 23 V
- Power Max
- 395W (Tc)
- Technology
- SiC
- Fet Type
- 6 N-Channel (3-Phase Bridge)
- Configuration
- Three Phase Bridge
- Typical Turnon Delay Time
- 30 ns
- Gate Charge Qg Max Vgs
- 232nC @ 20V
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Pd Power Dissipation
- 395 W
- Vds Drainsource Breakdown Voltage
- 1200 V
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Rise Time
- 30 ns
- RoHS
- Details
- Ürün Durumu
- Active
- Input Capacitance Ciss Max Vds
- 3020pF @ 1000V
- Tip
- MOSFET Power Module
- Current Continuous Drain Id25
- 89A (Tc)
- Vgs Th Gatesource Threshold Voltage
- 1.8 V
- Rds On Max Id Vgs
- 31mOhm @ 40A, 20V
- Fet Feature
- Silicon Carbide (SiC)
- Fabrika Paket Adedi
- 1
- Kılıf / Paket
- Module
- Montaj Tipi
- Chassis Mount
- Rds On Drainsource Resistance
- 31 mOhms
- Typical Turnoff Delay Time
- 50 ns
- Id Continuous Drain Current
- 89 A
- Minimum Operating Temperature
- - 40 C
- Montaj Stili
- Screw Mounts
- Ürün Tipi
- Discrete Semiconductor Modules
- Vgsth Max Id
- 2.8V @ 3mA
- Transistor Polarity
- N-Channel
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