MSCSM120SKM11CT3AG

Specifications

Akım

254 A

Technology

SiC

Maks. Çalışma Sıcaklığı

+ 125 C

Paket

Tube

Vgs Gatesource Voltage

- 10 V, 25 V

Ambalaj

Bulk

Typical Turnon Delay Time

30 ns

Configuration

1 Phase

Temel Ürün No

MSCSM120

Rise Time

30 ns

Pd Power Dissipation

1067 W

Vds Drainsource Breakdown Voltage

1200 V

Tip

MOSFET

Vgs Th Gatesource Threshold Voltage

1.8 V

Vf Forward Voltage

1.5 V at 180 A

Ürün Durumu

Active

RoHS

Details

Gerilim

1.2 kV

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

10.4 mOhms

Typical Turnoff Delay Time

50 ns

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Minimum Operating Temperature

- 40 C

Id Continuous Drain Current

254 A

Voltage Isolation

4000Vrms

Ürün Tipi

Discrete Semiconductor Modules

Transistor Polarity

N-Channel

Montaj Stili

Screw Mount

Vr Reverse Voltage

1200 V