MSCSM120HM31CTBL2NG

Specifications

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Rds On Drainsource Resistance

31 mOhms

Montaj Tipi

Chassis Mount

Typical Turnoff Delay Time

50 ns

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

3020pF @ 1000V

Current Continuous Drain Id25

79A

Tip

Full Bridge

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

31mOhm @ 40A, 20V

Vf Forward Voltage

1.5 V at 30 A

Vgs Th Gatesource Threshold Voltage

1.8 V

Montaj Stili

Screw Mounts

Vr Reverse Voltage

1200 V

Vgsth Max Id

2.8V @ 1mA

Ürün Tipi

Discrete Semiconductor Modules

Transistor Polarity

N-Channel

Minimum Operating Temperature

- 55 C

Id Continuous Drain Current

79 A

Fet Type

4 N-Channel (Full Bridge)

Maks. Çalışma Sıcaklığı

+ 175 C

Paket

Bulk

Vgs Gatesource Voltage

- 10 V, + 25 V

Technology

SiC

Power Max

310W

Pd Power Dissipation

310 W

Vds Drainsource Breakdown Voltage

1.2 kV

Drain To Source Voltage Vdss

1200V

Rise Time

30 ns

Typical Turnon Delay Time

30 ns

Configuration

Full Bridge

Temel Ürün No

MSCSM120

Gate Charge Qg Max Vgs

232nC @ 20V

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)