Volume pricing
- 1+ pcs$689.33
- 10+ pcs$650.31
- 100+ pcs$613.50
- 500+ pcs$578.78
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 4 N-Channel (Full Bridge)
- Vgs Gatesource Voltage
- - 10 V, 23 V
- Paket
- Bulk
- Maks. Çalışma Sıcaklığı
- + 175 C
- Power Max
- 873W (Tc)
- Technology
- SiC
- Vds Drainsource Breakdown Voltage
- 1200 V
- Pd Power Dissipation
- 873 W
- Rise Time
- 74 ns
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Gate Charge Qg Max Vgs
- 928nC @ 20V
- Configuration
- Full Bridge
- Typical Turnon Delay Time
- 66 ns
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Kılıf / Paket
- Module
- Fabrika Paket Adedi
- 1
- Typical Turnoff Delay Time
- 166 ns
- Rds On Drainsource Resistance
- 7.8 mOhms
- Montaj Tipi
- Chassis Mount
- Input Capacitance Ciss Max Vds
- 12000pF @ 1000V
- RoHS
- Details
- Ürün Durumu
- Active
- Fet Feature
- Silicon Carbide (SiC)
- Rds On Max Id Vgs
- 7.8mOhm @ 80A, 20V
- Vgs Th Gatesource Threshold Voltage
- 1.8 V
- Current Continuous Drain Id25
- 333A (Tc)
- Tip
- Full Bridge SiC Power Module
- Montaj Stili
- Screw Mounts
- Transistor Polarity
- N-Channel
- Ürün Tipi
- Discrete Semiconductor Modules
- Vgsth Max Id
- 2.8V @ 12mA
- Id Continuous Drain Current
- 333 A
- Minimum Operating Temperature
- - 40 C
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