Volume pricing
- 1+ pcs$197.86
- 10+ pcs$186.66
- 100+ pcs$176.10
- 500+ pcs$166.13
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pd Power Dissipation
- 310 W
- Vds Drainsource Breakdown Voltage
- 1200 V
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Rise Time
- 30 ns
- Typical Turnon Delay Time
- 30 ns
- Configuration
- Double Dual Common Source
- Gate Charge Qg Max Vgs
- 232nC @ 20V
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Fet Type
- 4 N-Channel, Common Source
- Maks. Çalışma Sıcaklığı
- + 175 C
- Paket
- Bulk
- Vgs Gatesource Voltage
- - 10 V, 23 V
- Technology
- SiC
- Power Max
- 310W
- Montaj Stili
- Screw Mounts
- Vgsth Max Id
- 2.8V @ 3mA
- Ürün Tipi
- Discrete Semiconductor Modules
- Transistor Polarity
- N-Channel
- Minimum Operating Temperature
- - 55 C
- Id Continuous Drain Current
- 79 A
- Fabrika Paket Adedi
- 1
- Kılıf / Paket
- Module
- Rds On Drainsource Resistance
- 31 mOhms
- Montaj Tipi
- Chassis Mount
- Typical Turnoff Delay Time
- 50 ns
- Ürün Durumu
- Active
- RoHS
- Details
- Input Capacitance Ciss Max Vds
- 3020pF @ 1000V
- Current Continuous Drain Id25
- 79A
- Tip
- MOSFET Power Module
- Vgs Th Gatesource Threshold Voltage
- 1.8 V
- Rds On Max Id Vgs
- 31mOhm @ 40A, 20V
- Fet Feature
- Silicon Carbide (SiC)
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