MSCSM120DDUM16CTBL3NG

Specifications

Transistor Polarity

N-Channel

Vgsth Max Id

2.8V @ 2mA

Ürün Tipi

Discrete Semiconductor Modules

Vr Reverse Voltage

1200 V

Montaj Stili

Screw Mounts

Minimum Operating Temperature

- 55 C

Id Continuous Drain Current

150 A

Typical Turnoff Delay Time

50 ns

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

16 mOhms

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Vgs Th Gatesource Threshold Voltage

1.8 V

Vf Forward Voltage

1.5 V at 60 A

Rds On Max Id Vgs

16mOhm @ 80A, 20V

Fet Feature

Silicon Carbide (SiC)

Tip

Double Dual Common Source SiC MOSFET Power Module

Current Continuous Drain Id25

150A

Input Capacitance Ciss Max Vds

6040pF @ 1000V

Ürün Durumu

Active

Rise Time

30 ns

Drain To Source Voltage Vdss

1200V

Vds Drainsource Breakdown Voltage

1.2 kV

Pd Power Dissipation

560 W

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Gate Charge Qg Max Vgs

464nC @ 20V

Temel Ürün No

MSCSM120

Typical Turnon Delay Time

30 ns

Configuration

Double Dual Common Source

Fet Type

4 N-Channel, Common Source

Technology

SiC

Power Max

560W

Vgs Gatesource Voltage

- 10 V, + 25 V

Maks. Çalışma Sıcaklığı

+ 175 C

Paket

Bulk