MSCSM120AM16CT1AG

Specifications

Current Continuous Drain Id25

173A (Tc)

Tip

Phase Leg

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

16mOhm @ 80A, 20V

Vf Forward Voltage

1.5 V at 60 A

Vgs Th Gatesource Threshold Voltage

1.8 V

Ürün Durumu

Active

RoHS

Details

Input Capacitance Ciss Max Vds

6040pF @ 1000V

Rds On Drainsource Resistance

16 mOhms

Montaj Tipi

Chassis Mount

Typical Turnoff Delay Time

50 ns

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Minimum Operating Temperature

- 40 C

Id Continuous Drain Current

173 A

Power Dissipation

745

Vgsth Max Id

2.8V @ 2mA

Ürün Tipi

Discrete Semiconductor Modules

Transistor Polarity

N-Channel

Montaj Stili

Screw Mounts

Vr Reverse Voltage

1200 V

Technology

SiC

Power Max

745W (Tc)

Maks. Çalışma Sıcaklığı

+ 125 C

Paket

Tube

Vgs Gatesource Voltage

- 10 V, + 25 V

Fet Type

2 N Channel (Phase Leg)

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Tedarikçi Cihaz Paketi

SP1F

Ambalaj

Bulk

Typical Turnon Delay Time

30 ns

Temel Ürün No

MSCSM120

Gate Charge Qg Max Vgs

464nC @ 20V

Drain To Source Voltage Vdss

1200V (1.2kV)

Rise Time

30 ns

Pd Power Dissipation

745 W

Continuous Drain Current Id

173

Vds Drainsource Breakdown Voltage

1200 V