MSCSM120AM11CT3AG

Specifications

Vds Drainsource Breakdown Voltage

1200 V

Continuous Drain Current Id

254

Pd Power Dissipation

1067 W

Rise Time

30 ns

Drain To Source Voltage Vdss

1200V (1.2kV)

Gate Charge Qg Max Vgs

696nC @ 20V

Temel Ürün No

MSCSM120

Typical Turnon Delay Time

30 ns

Ambalaj

Bulk

Tedarikçi Cihaz Paketi

SP3F

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Fet Type

2 N Channel (Phase Leg)

Vgs Gatesource Voltage

- 10 V, 25 V

Paket

Tube

Maks. Çalışma Sıcaklığı

+ 125 C

Power Max

1.067kW (Tc)

Technology

SiC

Vr Reverse Voltage

1200 V

Montaj Stili

Screw Mount

Transistor Polarity

N-Channel

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 3mA

Power Dissipation

1.067

Id Continuous Drain Current

254 A

Minimum Operating Temperature

- 40 C

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Typical Turnoff Delay Time

50 ns

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

10.4 mOhms

Input Capacitance Ciss Max Vds

9060pF @ 1000V

RoHS

Details

Ürün Durumu

Active

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

10.4mOhm @ 120A, 20V

Vf Forward Voltage

1.5 V at 90 A

Vgs Th Gatesource Threshold Voltage

1.8 V

Current Continuous Drain Id25

254A (Tc)

Tip

Phase Leg