Volume pricing
- 1+ pcs$358.34
- 10+ pcs$338.06
- 100+ pcs$318.92
- 500+ pcs$300.87
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rise Time
- 30 ns
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Vds Drainsource Breakdown Voltage
- 1200 V
- Pd Power Dissipation
- 1.409 kW
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Gate Charge Qg Max Vgs
- 928nC @ 20V
- Configuration
- Dual
- Typical Turnon Delay Time
- 30 ns
- Fet Type
- 2 N Channel (Phase Leg)
- Power Max
- 1.409kW (Tc)
- Technology
- SiC
- Vgs Gatesource Voltage
- - 10 V, 23 V
- Paket
- Bulk
- Maks. Çalışma Sıcaklığı
- + 175 C
- Transistor Polarity
- N-Channel
- Ürün Tipi
- Discrete Semiconductor Modules
- Vgsth Max Id
- 2.8V @ 12mA
- Montaj Stili
- Screw Mounts
- Id Continuous Drain Current
- 337 A
- Minimum Operating Temperature
- - 40 C
- Typical Turnoff Delay Time
- 50 ns
- Montaj Tipi
- Chassis Mount
- Rds On Drainsource Resistance
- 7.8 mOhms
- Fabrika Paket Adedi
- 1
- Kılıf / Paket
- Module
- Fet Feature
- Silicon Carbide (SiC)
- Rds On Max Id Vgs
- 7.8mOhm @ 160A, 20V
- Vgs Th Gatesource Threshold Voltage
- 1.8 V
- Current Continuous Drain Id25
- 337A (Tc)
- Tip
- Phase Leg SiC MOSFET Power Module
- Input Capacitance Ciss Max Vds
- 12100pF @ 1000V
- RoHS
- Details
- Ürün Durumu
- Active
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