Volume pricing
- 1+ pcs$619.90
- 10+ pcs$584.81
- 100+ pcs$551.71
- 500+ pcs$520.48
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Technology
- SiC
- Power Max
- 2.031kW (Tc)
- Maks. Çalışma Sıcaklığı
- + 175 C
- Paket
- Bulk
- Vgs Gatesource Voltage
- - 10 V, 23 V
- Fet Type
- 2 N Channel (Phase Leg)
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Typical Turnon Delay Time
- 56 ns
- Configuration
- Dual
- Gate Charge Qg Max Vgs
- 1392nC @ 20V
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Rise Time
- 55 ns
- Pd Power Dissipation
- 2.031 kW
- Vds Drainsource Breakdown Voltage
- 1200 V
- Current Continuous Drain Id25
- 495A (Tc)
- Tip
- Phase Leg SiC MOSFET Power Module
- Rds On Max Id Vgs
- 5.2mOhm @ 240A, 20V
- Fet Feature
- Silicon Carbide (SiC)
- Ürün Durumu
- Active
- RoHS
- Details
- Input Capacitance Ciss Max Vds
- 18100pF @ 1000V
- Montaj Tipi
- Chassis Mount
- Rds On Drainsource Resistance
- 5.2 mOhms
- Typical Turnoff Delay Time
- 166 ns
- Kılıf / Paket
- Module
- Fabrika Paket Adedi
- 1
- Minimum Operating Temperature
- - 40 C
- Id Continuous Drain Current
- 495 A
- Vgsth Max Id
- 2.8V @ 18mA
- Ürün Tipi
- Discrete Semiconductor Modules
- Transistor Polarity
- N-Channel
- Montaj Stili
- Screw Mounts
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