MSCSM120AM042CD3AG

Specifications

Maks. Çalışma Sıcaklığı

+ 125 C

Paket

Box

Vgs Gatesource Voltage

- 10 V, + 25 V

Technology

SiC

Power Max

2.031kW (Tc)

Fet Type

2 N Channel (Phase Leg)

Typical Turnon Delay Time

56 ns

Channel Type

Dual N Channel

Gate Charge Qg Max Vgs

1392nC @ 20V

Temel Ürün No

MSCSM120

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Tedarikçi Cihaz Paketi

D3

Ambalaj

Bulk

Pd Power Dissipation

2031 W

Continuous Drain Current Id

495

Vds Drainsource Breakdown Voltage

1200 V

Drain To Source Voltage Vdss

1200V (1.2kV)

Rise Time

55 ns

Ürün Durumu

Active

RoHS

Details

Input Capacitance Ciss Max Vds

18.1pF @ 1000V

Tip

Phase Leg

Current Continuous Drain Id25

495A (Tc)

Vgs Th Gatesource Threshold Voltage

1.8 V

Vf Forward Voltage

1.5 V at 180 A

Rds On Max Id Vgs

5.2mOhm @ 240A, 20V

Fet Feature

Silicon Carbide (SiC)

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

5.2 mOhms

Typical Turnoff Delay Time

166 ns

Power Dissipation

2.031

Minimum Operating Temperature

- 40 C

Id Continuous Drain Current

495 A

Montaj Stili

Screw Mounts

Vr Reverse Voltage

1200 V

Vgsth Max Id

2.8V @ 6mA

Ürün Tipi

Discrete Semiconductor Modules

Transistor Polarity

N-Channel