Volume pricing
- 1+ pcs$883.76
- 10+ pcs$833.74
- 100+ pcs$786.54
- 500+ pcs$742.02
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Paket Adedi
- 1
- Kılıf / Paket
- Module
- Montaj Tipi
- Chassis Mount
- Rds On Drainsource Resistance
- 3.1 mOhms
- Typical Turnoff Delay Time
- 166 ns
- Ürün Durumu
- Active
- RoHS
- Details
- Input Capacitance Ciss Max Vds
- 30200pF @ 1000V
- Tip
- e Phase Leg SiC MOSFET Power
- Current Continuous Drain Id25
- 805A (Tc)
- Vgs Th Gatesource Threshold Voltage
- 1.8 V
- Rds On Max Id Vgs
- 3.1mOhm @ 400A, 20V
- Fet Feature
- Silicon Carbide (SiC)
- Montaj Stili
- Screw Mounts
- Vgsth Max Id
- 2.8V @ 30mA
- Ürün Tipi
- Discrete Semiconductor Modules
- Transistor Polarity
- N-Channel
- Minimum Operating Temperature
- - 40 C
- Id Continuous Drain Current
- 805 A
- Fet Type
- 2 N Channel (Phase Leg)
- Maks. Çalışma Sıcaklığı
- + 175 C
- Paket
- Bulk
- Vgs Gatesource Voltage
- - 10 V, 23 V
- Technology
- SiC
- Power Max
- 3.215kW (Tc)
- Pd Power Dissipation
- 3.215 kW
- Vds Drainsource Breakdown Voltage
- 1200 V
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Rise Time
- 55 ns
- Typical Turnon Delay Time
- 56 ns
- Configuration
- Dual
- Gate Charge Qg Max Vgs
- 2320nC @ 20V
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
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