MSCSM120AM03CT6LIAG

Specifications

Typical Turnoff Delay Time

166 ns

Rds On Drainsource Resistance

3.1 mOhms

Montaj Tipi

Chassis Mount

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

3.1mOhm @ 400A, 20V

Vf Forward Voltage

1.5 V

Vgs Th Gatesource Threshold Voltage

1.8 V

Tip

Phase Leg

Current Continuous Drain Id25

805A (Tc)

Input Capacitance Ciss Max Vds

30200pF @ 1kV

RoHS

Details

Ürün Durumu

Active

Transistor Polarity

N-Channel

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 10mA

Vr Reverse Voltage

1200 V

Montaj Stili

SMD/SMT

Id Continuous Drain Current

805 A

Minimum Operating Temperature

- 40 C

Power Dissipation

3.215

Fet Type

2 N Channel (Phase Leg)

Power Max

3.215kW (Tc)

Technology

SiC

Vgs Gatesource Voltage

- 10 V, + 25 V

Paket

Tube

Maks. Çalışma Sıcaklığı

+ 125 C

Rise Time

55 ns

Drain To Source Voltage Vdss

1200V (1.2kV)

Vds Drainsource Breakdown Voltage

1200 V

Continuous Drain Current Id

805

Pd Power Dissipation

3.215 kW

Tedarikçi Cihaz Paketi

SP6C LI

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Gate Charge Qg Max Vgs

2320nC @ 20V

Temel Ürün No

MSCSM120

Configuration

Dual

Typical Turnon Delay Time

56 ns