Volume pricing
- 1+ pcs$1.00
- 10+ pcs$1.00
- 25+ pcs$1.00
- 50+ pcs$1.00
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Technology
- SiC
- Power Max
- 3.75kW (Tc)
- Maks. Çalışma Sıcaklığı
- + 175 C
- Paket
- Bulk
- Vgs Gatesource Voltage
- - 10 V, 23 V
- Fet Type
- 2 N Channel (Phase Leg)
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Typical Turnon Delay Time
- 56 ns
- Configuration
- Dual
- Gate Charge Qg Max Vgs
- 2784nC @ 20V
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Rise Time
- 55 ns
- Pd Power Dissipation
- 3.75 kW
- Vds Drainsource Breakdown Voltage
- 1200 V
- Tip
- Phase Leg
- Current Continuous Drain Id25
- 947A (Tc)
- Vgs Th Gatesource Threshold Voltage
- 1.8 V
- Rds On Max Id Vgs
- 2.6mOhm @ 480A, 20V
- Fet Feature
- Silicon Carbide (SiC)
- Ürün Durumu
- Active
- RoHS
- Details
- Input Capacitance Ciss Max Vds
- 36200pF @ 1000V
- Rds On Drainsource Resistance
- 3.4 mOhms
- Montaj Tipi
- Chassis Mount
- Typical Turnoff Delay Time
- 150 ns
- Kılıf / Paket
- Module
- Fabrika Paket Adedi
- 1
- Minimum Operating Temperature
- - 40 C
- Id Continuous Drain Current
- 947 A
- Vgsth Max Id
- 2.8V @ 36mA
- Ürün Tipi
- Discrete Semiconductor Modules
- Transistor Polarity
- N-Channel
- Montaj Stili
- Screw Mounts
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