MSCSM120AM027CT6AG

Specifications

Power Max

2.97kW (Tc)

Technology

SiC

Vgs Gatesource Voltage

- 10 V, 25 V

Paket

Tube

Maks. Çalışma Sıcaklığı

+ 125 C

Fet Type

2 N Channel (Phase Leg)

Ambalaj

Bulk

Tedarikçi Cihaz Paketi

SP6C

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Temel Ürün No

MSCSM120

Gate Charge Qg Max Vgs

2088nC @ 20V

Typical Turnon Delay Time

56 ns

Rise Time

55 ns

Drain To Source Voltage Vdss

1200V (1.2kV)

Vds Drainsource Breakdown Voltage

1200 V

Pd Power Dissipation

2970 W

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

3.5mOhm @ 360A, 20V

Vgs Th Gatesource Threshold Voltage

1.8 V

Vf Forward Voltage

1.5 V at 270 A

Tip

Phase Leg

Current Continuous Drain Id25

733A (Tc)

Input Capacitance Ciss Max Vds

27000pF @1000V

RoHS

Details

Ürün Durumu

Active

Typical Turnoff Delay Time

166 ns

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

3.5 mOhms

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Id Continuous Drain Current

733 A

Minimum Operating Temperature

- 40 C

Transistor Polarity

N-Channel

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 9mA

Vr Reverse Voltage

1200 V

Montaj Stili

Screw Mount