Volume pricing
- 1+ pcs$39.89
- 10+ pcs$37.64
- 100+ pcs$35.51
- 500+ pcs$33.50
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ipp Peak Pulse Current
- 1.041 kA
- Voltage Reverse Standoff Typ
- 8.5V
- Terminal Kaplaması
- MATTE TIN
- Current Peak Pulse101000s
- 1041A (1.041kA)
- Breakdown Voltagemin
- 94.4 V
- Diode Type
- TRANS VOLTAGE SUPPRESSOR DIODE
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Working Voltage
- 8.5 V
- Rep Pk Reverse Voltagemax
- 85 V
- Number Of Elements
- 1
- Package Description
- S-PSSO-G1
- HTS Kodu
- 8541.10.00.50
- Diode Element Material
- SILICON
- Montaj Tipi
- Surface Mount
- Power Dissipation Max
- 2.5 W
- Applications
- General Purpose
- Ambalaj
- Bulk
- Qualification Status
- Not Qualified
- Bidirectional Channels
- 1
- Reflow Temperaturemax S
- 40
- Maks. Çalışma Sıcaklığı
- + 150 C
- Ürün Durumu
- Active
- Direction Type
- Bi-Directional
- Nonrep Peak Rev Power Dismax
- 15000 W
- Usage Level
- Military grade
- Tepe Reflow Süresi (maks. sn)
- 40
- Vf Forward Voltage
- 2 V
- Ihs Manufacturer
- MICROSEMI CORP
- Ürün Tipi
- TVS Diodes
- Risk Rank
- 5.58
- Package Body Material
- PLASTIC/EPOXY
- Jesd30 Code
- S-PSSO-G1
- Clamping Voltage
- 14.4 V
- Test Current
- 5 mA
- Yüzey Montaj
- YES
- Breakdown Voltagemax
- 104 V
- Technology
- AVALANCHE
- Voltage Breakdown Min
- 9.44V
- Minimum Operating Temperature
- - 55 C
- Peak Pulse Power Dissipation
- 15000 W
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