Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Fet Feature
- Standard
- Tepe Reflow Sıcaklığı (°C)
- 260
- Element Configuration
- Dual
- Tepe Reflow Süresi (maks. sn)
- 40
- Parça Durumu
- Obsolete
- Gate To Source Voltage Vgs
- 1.6V
- Number Of Channels
- 2
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2014
- Çalışma Sıcaklığı
- -25°C~125°C TJ
- Continuous Drain Current Id
- 3mA
- Drain To Source Voltage Vdss
- 1200V 1.2kV
- Drain To Source Breakdown Voltage
- 600V
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 6
- Number Of Elements
- 2
- Fet Type
- 2 N-Channel (Cascoded)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Vgsth Max Id
- 1.6V @ 10μA
- Rds On Max Id Vgs
- 3000 Ω @ 2mA, 2.8V
- Transistor Application
- AMPLIFIER
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Terminal Formu
- BUTT
- Montaj
- Surface Mount
- Kılıf / Paket
- 6-VFLGA
- Terminal Sayısı
- 6
- Operating Mode
- ENHANCEMENT MODE
- Terminal Pozisyonu
- BOTTOM
- Input Capacitance Ciss Max Vds
- 50pF @ 25V
- Max Power Dissipation
- 350mW
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