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Microchip Technology

JANSR2N3810U/TR

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$248.30
  • 10+ pcs$234.25
  • 100+ pcs$220.99
  • 500+ pcs$208.48

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Compliant

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Specifications

Dc Current Gain Hfe Max
450 at 100 uA, 5 V
Configuration
Dual
Ürün Durumu
Active
Currentcollector Ic Max
50mA
Dc Current Gain Hfe Min Ic Vce
150 @ 1mA, 5V
Power Max
350mW
Collectoremitter Saturation Voltage
200 mV
Current Collector Cutoff Max
10μA (ICBO)
Voltage Collector Emitter Breakdown Max
60V
Pd Power Dissipation
350 mW
Collector Emitter Voltage Vceo Max
60 V
Tedarikçi Cihaz Paketi
6-SMD
Maximum Dc Collector Current
50 mA
Collector Base Voltage Vcbo
60 V
Minimum Operating Temperature
- 65 C
Transistor Polarity
PNP
Montaj Stili
SMD/SMT
Vce Saturation Max Ib Ic
250mV @ 1mA, 100μA
Fabrika Paket Adedi
50
Emitter Base Voltage Vebo
5 V
Ambalaj
Reel
Dc Collectorbase Gain Hfe Min
100 at 10 uA, 5 V
Seri
Military, MIL-PRF-19500/336
Kılıf / Paket
6-SMD, No Lead
RoHS
N
Technology
Si
Transistor Type
2 PNP (Dual)
Çalışma Sıcaklığı
-65°C ~ 200°C (TJ)
Paket
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Maks. Çalışma Sıcaklığı
+ 200 C
Ürün Tipi
BJTs - Bipolar Transistors

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