JANS2N5794UC

Specifications

Ürün Tipi

BJTs - Bipolar Transistors

Currentcollector Ic Max

600mA

Pd Power Dissipation

600 mW

Seri

Military, MIL-PRF-19500/495

Dc Current Gain Hfe Min Ic Vce

100 @ 150mA, 10V

Collector Base Voltage Vcbo

75 V

Kılıf / Paket

6-SMD, No Lead

Emitter Base Voltage Vebo

6 V

Power Max

600mW

Paket

Bulk

Montaj Stili

SMD/SMT

Current Collector Cutoff Max

10μA (ICBO)

Maks. Çalışma Sıcaklığı

+ 200 C

Fabrika Paket Adedi

1

Dc Current Gain Hfe Max

300 at 150 mA, 10 V

Collector Emitter Voltage Vceo Max

40 V

Vce Saturation Max Ib Ic

900mV @ 30mA, 300mA

Voltage Collector Emitter Breakdown Max

40V

Continuous Collector Current

600 mA

Minimum Operating Temperature

- 65 C

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Ürün Durumu

Active

Transistor Polarity

NPN

Collectoremitter Saturation Voltage

900 mV

RoHS

N

Transistor Type

2 NPN (Dual)

Montaj Tipi

Surface Mount

Tedarikçi Cihaz Paketi

UC

Configuration

Dual

Technology

Si