Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qualification Status
- Not Qualified
- Tepe Reflow Süresi (maks. sn)
- 40
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 3.5 Ω @ 1A, 0V
- Fall Time Typ
- 20 ns
- Ambalaj
- Tray
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Turn Off Delay Time
- 10 ns
- Yayın Yılı
- 2013
- Weight
- 37.393021mg
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- 2 N-Channel (Dual)
- Number Of Elements
- 1
- Gerilim
- 250V
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- DRAIN
- Element Configuration
- Dual
- Kılıf / Paket
- 8-VDFN Exposed Pad
- Input Capacitance Ciss Max Vds
- 1000pF @ 25V
- JESD-609 Kodu
- e3
- Transistor Application
- SWITCHING
- Gate Charge Qg Max Vgs
- 7.04nC @ 1.5V
- Terminal Sayısı
- 8
- Terminal Kaplaması
- MATTE TIN
- Fet Feature
- Depletion Mode
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 16 Weeks
- Additional Feature
- LOW THRESHOLD
- Tepe Reflow Sıcaklığı (°C)
- 260
- Continuous Drain Current Id
- 1.1A
- Transistor Element Material
- SILICON
- Turn On Delay Time
- 10 ns
- Direnç
- 3.5Ohm
- ECCN Kodu
- EAR99
- Jesd30 Code
- R-PDSO-N8
- Akım
- 11A
- Rise Time
- 20ns
- Number Of Channels
- 2
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