APTGL475DA120D3G

Specifications

Power Max

2080 W

Gateemitter Voltagemax

20 V

Configuration

Single

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Part Life Cycle Code

Active

ECCN Kodu

EAR99

Minimum Operating Temperature

- 40 C

Continuous Collector Current At25 C

610 A

Package Style

FLANGE MOUNT

Jesd30 Code

R-XUFM-X5

Input Capacitance

24.6 nF

Fabrika Paket Adedi

1

Voltage Collector Emitter Breakdown Max

1200 V

Ihs Manufacturer

MICROSEMI CORP

Power Dissipation

2.08

REACH Uyumluluk Kodu

compliant

Package Body Material

UNSPECIFIED

Collector Emitter Voltage Vceo Max

1.2 kV

Temel Ürün No

APTGL475

Gateemitter Leakage Current

400 nA

Input Capacitance Cies Vce

24.6 nF @ 25 V

Max Collector Current

610 A

Input

Standard

Currentcollector Ic Max

610 A

Yüzey Montaj

NO

Ürün Durumu

Active

Vcesatmax

2.2 V

Kılıf / Paket

D3-11

Ambalaj

Bulk

Terminal Pozisyonu

UPPER

Reflow Temperaturemax S

NOT SPECIFIED

Operating Temperaturemax

175 °C

Pd Power Dissipation

2.08 kW

Rohs Code

Yes

Collector Currentmax Ic

610 A

Montaj

Chassis Mount, Screw

Vceon Max Vge Ic

2.2V @ 15V, 400A

Terminal Formu

UNSPECIFIED

Collectoremitter Saturation Voltage

1.8 V