Volume pricing
- 1+ pcs$8.12
- 10+ pcs$7.66
- 100+ pcs$7.22
- 500+ pcs$6.81
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge
- 155 nC
- Voltage Collector Emitter Breakdown Max
- 1200 V
- Pd Power Dissipation
- 272 W
- Currentcollector Ic Max
- 67 A
- Vceon Max Vge Ic
- 2.1V @ 15V, 25A
- Collector Emitter Voltage Vceo Max
- 1.2 kV
- Switching Energy
- -, 2.15J (off)
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Test Conditions
- 800V, 25A, 1Ohm, 15V
- Kılıf / Paket
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Ambalaj
- Reel
- Igbt Type
- Trench Field Stop
- Montaj Stili
- SMD/SMT
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Td Onoff25c
- 22ns/280ns
- RoHS
- Details
- Configuration
- Single
- Current Collector Pulsed Icm
- 75 A
- Fabrika Paket Adedi
- 400
- Montaj Tipi
- Surface Mount
- Temel Ürün No
- APT25GN120
- Minimum Operating Temperature
- - 55 C
- Ürün Durumu
- Active
- Ürün Tipi
- IGBT Transistors
- Tedarikçi Cihaz Paketi
- D3PAK
- Maks. Çalışma Sıcaklığı
- + 150 C
- Giriş Tipi
- Standard
- Power Max
- 272 W
- Continuous Collector Current At25 C
- 67 A
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