Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qualification Status
- Not Qualified
- Uzunluk
- 4.9mm
- Ambalaj
- Tube
- Tepe Reflow Sıcaklığı (°C)
- 260
- Memory Format
- EEPROM
- Contact Plating
- Tin
- Interface
- I2C, Serial
- Endurance
- 1000000 Write/Erase Cycles
- Pin Sayısı
- 8
- Besleme Gerilimi
- 1.7V~5.5V
- Fabrika Tedarik Süresi
- 6 Weeks
- Yayın Yılı
- 2002
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- yes
- Write Cycle Time Word Page
- 5ms
- Parça Durumu
- Active
- Memory Interface
- I2C
- Operating Mode
- SYNCHRONOUS
- Write Cycle Timemax Twc
- 5ms
- Fonksiyon Sayısı
- 1
- RoHS Durumu
- ROHS3 Compliant
- Memory Types
- Non-Volatile
- I2c Control Byte
- 1010DDDR
- Supply Voltagemin Vsup
- 1.7V
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Operating Supply Voltage
- 5V
- Density
- 64 kb
- Standby Currentmax
- 0.000001A
- Terminal Pozisyonu
- DUAL
- Clock Frequency
- 400kHz
- Serial Bus Type
- I2C
- Çalışma Sıcaklığı
- -40°C~85°C TA
- Memory Size
- 64Kb 8K x 8
- Nominal Supply Current
- 3mA
- Tepe Reflow Süresi (maks. sn)
- 40
- Yükseklik
- 1.5mm
- Besleme Gerilimi
- 5V
Related Products
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory