Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tape & Reel (TR)
- Clock Frequency
- 20MHz
- Tepe Reflow Süresi (maks. sn)
- 40
- Memory Width
- 8
- Besleme Gerilimi
- 2.5V~5.5V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Active
- JESD-609 Kodu
- e3
- Fonksiyon Sayısı
- 1
- Yüzey Montaj
- YES
- Memory Size
- 512Kb 64K x 8
- Temel Parça No
- 23LCV512
- Memory Density
- 524288 bit
- Montaj Tipi
- Surface Mount
- Operating Mode
- SYNCHRONOUS
- Memory Types
- Non-Volatile
- Çalışma Sıcaklığı
- -40°C~85°C TA
- Memory Format
- NVSRAM
- Usage Level
- Automotive grade
- Kılıf / Paket
- 8-TSSOP (0.173, 4.40mm Width)
- Terminal Sayısı
- 8
- Genişlik
- 3mm
- Fabrika Tedarik Süresi
- 6 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Organization
- 64KX8
- Interface
- SPI, Serial
- RoHS Durumu
- ROHS3 Compliant
- Screening Level
- TS 16949
- Memory Interface
- SPI - Dual I/O
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Jesd30 Code
- R-PDSO-G8
- Supply Voltagemax Vsup
- 5.5V
- Maks. Oturma Yüksekliği
- 1.2mm
- Terminal Adımı
- 0.65mm
- Uzunluk
- 4.4mm
- Yayın Yılı
- 2012
- Supply Voltagemin Vsup
- 2.5V
Related Products
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory