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11AA160T-I/MNY

Microchip Technology

11AA160T-I/MNY

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Memory Types
Non-Volatile
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kılıf / Paket
8-WFDFN Exposed Pad
Temel Parça No
11AA160
Tepe Reflow Süresi (maks. sn)
40
Write Cycle Time Word Page
5ms
RoHS Durumu
ROHS3 Compliant
Standby Currentmax
0.000005A
Memory Format
EEPROM
Terminal Adımı
0.5mm
Yayın Yılı
2009
Nominal Supply Current
5mA
Terminal Sayısı
8
Ambalaj
Tape & Reel (TR)
Density
16 kb
Power Supplies
2/5V
Parça Durumu
Active
JESD-609 Kodu
e4
Clock Frequency
100kHz
Memory Interface
Single Wire
Pin Sayısı
8
Write Cycle Timemax Twc
10ms
Besleme Gerilimi
5V
Uzunluk
3mm
Fabrika Tedarik Süresi
6 Weeks
Interface
Serial
Supply Voltagemax Vsup
5.5V
Radyasyon Dayanımı
No
Memory Width
8
Fonksiyon Sayısı
1
Kurşunsuz
Lead Free
Terminal Pozisyonu
DUAL
Tepe Reflow Sıcaklığı (°C)
260
Genişlik
2mm
Write Protection
SOFTWARE
Çalışma Sıcaklığı
-40°C~85°C TA
Pin Sayısı
8
Endurance
1000000 Write/Erase Cycles
Montaj
Surface Mount
Montaj Tipi
Surface Mount

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