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Microchip

SG2013J

Arrays BJT Transistors

RoHS: Compliant

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Specifications

Montaj Stili
Through Hole
Dc Current Gain Hfe Min Ic Vce
900 @ 500mA, 2V
Vce Saturation Max Ib Ic
1.9V @ 600µA, 500mA
Fabrika Paket Adedi
1
Configuration
Array 7
Voltage Collector Emitter Breakdown Max
50V
Temel Ürün No
SG2013
Ürün Tipi
Darlington Transistors
Çıkış Tipi
Open Collector
Transistor Type
7 NPN Darlington
Ürün Durumu
Active
Minimum Operating Temperature
- 55 C
Tedarikçi Cihaz Paketi
16-CERDIP
Çalışma Sıcaklığı
-55°C ~ 125°C (TA)
Dc Collectorbase Gain Hfe Min
900
RoHS
Details
Maximum Dc Collector Current
600 mA
Collector Emitter Voltage Vceo Max
50 V
Transistor Polarity
NPN
Currentcollector Ic Max
600mA
Kılıf / Paket
16-CDIP (0.300, 7.62mm)
Maks. Çalışma Sıcaklığı
+ 125 C
Paket
Tray
Montaj Tipi
Through Hole

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