MSCSM70VR1M10CTPAG

Specifications

Fabrika Paket Adedi

1

Montaj Tipi

Chassis Mount

Gate Charge Qg Max Vgs

430nC @ 20V

Vds Drainsource Breakdown Voltage

700 V

Temel Ürün No

MSCSM70

Maks. Çalışma Sıcaklığı

+ 125 C

Vf Forward Voltage

1.8 V

Kılıf / Paket

Module

Tip

MOSFET Power Module

Rds On Max Id Vgs

9.5mOhm @ 80A, 20V

Minimum Operating Temperature

- 40 C

Vr Reverse Voltage

1200 V

Current Continuous Drain Id25

238A (Tc)

Power Max

674W (Tc)

Configuration

6 N-Channel (Phase Leg)

Id Continuous Drain Current

238 A

Vgs Gatesource Voltage

- 10 V, + 23 V

Paket

Bulk

Pd Power Dissipation

674 W

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Technology

Silicon Carbide (SiC)

RoHS

Details

Rds On Drainsource Resistance

9.5 mOhms

Montaj Stili

Screw Mounts

Input Capacitance Ciss Max Vds

9000pF @ 700V

Drain To Source Voltage Vdss

700V

Ürün Tipi

Discrete Semiconductor Modules

Vgs Th Gatesource Threshold Voltage

2.4 V

Ürün Durumu

Active

Vgsth Max Id

2.4V @ 8mA