MSCSM70VR1M07CT6AG

Specifications

Vgsth Max Id

2.4V @ 12mA

Ürün Tipi

Discrete Semiconductor Modules

Drain To Source Voltage Vdss

700V

Vgs Th Gatesource Threshold Voltage

2.4 V

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

13500pF @ 700V

Montaj Stili

Screw Mounts

Rds On Drainsource Resistance

6.4 mOhms

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

RoHS

Details

Technology

Silicon Carbide (SiC)

Vgs Gatesource Voltage

- 10 V, + 23 V

Id Continuous Drain Current

349 A

Paket

Bulk

Pd Power Dissipation

966 W

Current Continuous Drain Id25

349A (Tc)

Power Max

966W (Tc)

Configuration

2 N Channel (Phase Leg)

Vr Reverse Voltage

1200 V

Minimum Operating Temperature

- 40 C

Rds On Max Id Vgs

6.4mOhm @ 120A, 20V

Tip

MOSFET Power Module

Temel Ürün No

MSCSM70

Maks. Çalışma Sıcaklığı

+ 125 C

Vf Forward Voltage

1.8 V

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Montaj Tipi

Chassis Mount

Gate Charge Qg Max Vgs

645nC @ 20V

Vds Drainsource Breakdown Voltage

700 V