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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 2.4V @ 12mA
- Ürün Tipi
- Discrete Semiconductor Modules
- Drain To Source Voltage Vdss
- 700V
- Vgs Th Gatesource Threshold Voltage
- 2.4 V
- Ürün Durumu
- Active
- Input Capacitance Ciss Max Vds
- 13500pF @ 700V
- Montaj Stili
- Screw Mounts
- Rds On Drainsource Resistance
- 6.4 mOhms
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- RoHS
- Details
- Technology
- Silicon Carbide (SiC)
- Vgs Gatesource Voltage
- - 10 V, + 23 V
- Id Continuous Drain Current
- 349 A
- Paket
- Bulk
- Pd Power Dissipation
- 966 W
- Current Continuous Drain Id25
- 349A (Tc)
- Power Max
- 966W (Tc)
- Configuration
- 2 N Channel (Phase Leg)
- Vr Reverse Voltage
- 1200 V
- Minimum Operating Temperature
- - 40 C
- Rds On Max Id Vgs
- 6.4mOhm @ 120A, 20V
- Tip
- MOSFET Power Module
- Temel Ürün No
- MSCSM70
- Maks. Çalışma Sıcaklığı
- + 125 C
- Vf Forward Voltage
- 1.8 V
- Kılıf / Paket
- Module
- Fabrika Paket Adedi
- 1
- Montaj Tipi
- Chassis Mount
- Gate Charge Qg Max Vgs
- 645nC @ 20V
- Vds Drainsource Breakdown Voltage
- 700 V