MSCSM70VR1M03CT6AG

Specifications

Input Capacitance Ciss Max Vds

22500pF @ 700V

Vgsth Max Id

2.4V @ 20mA

Vgs Th Gatesource Threshold Voltage

2.4 V

Drain To Source Voltage Vdss

700V

Ürün Tipi

Discrete Semiconductor Modules

Ürün Durumu

Active

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Technology

Silicon Carbide (SiC)

RoHS

Details

Vgs Gatesource Voltage

- 10 V, + 23 V

Id Continuous Drain Current

585 A

Pd Power Dissipation

1.625 kW

Paket

Bulk

Montaj Stili

Screw Mounts

Rds On Drainsource Resistance

3.8 mOhms

Minimum Operating Temperature

- 40 C

Rds On Max Id Vgs

3.8mOhm @ 200A, 20V

Current Continuous Drain Id25

585A (Tc)

Configuration

2 N Channel (Phase Leg)

Power Max

1.625kW (Tc)

Vr Reverse Voltage

1200 V

Fabrika Paket Adedi

1

Vds Drainsource Breakdown Voltage

700 V

Gate Charge Qg Max Vgs

1075nC @ 20V

Montaj Tipi

Chassis Mount

Tip

MOSFET Power Module

Temel Ürün No

MSCSM70

Vf Forward Voltage

1.8 V

Kılıf / Paket

Module

Maks. Çalışma Sıcaklığı

+ 125 C