MSCSM120VR1M31C1AG

Specifications

Input Capacitance Ciss Max Vds

3020pF @ 1000V

RoHS

Details

Ürün Durumu

Active

Vf Forward Voltage

1.8 V

Vgs Th Gatesource Threshold Voltage

2.8 V

Rds On Max Id Vgs

31mOhm @ 40A, 20V

Current Continuous Drain Id25

89A (Tc)

Tip

MOSFET Power Module

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Rds On Drainsource Resistance

31 mOhms

Montaj Tipi

Chassis Mount

Id Continuous Drain Current

89 A

Minimum Operating Temperature

- 40 C

Vr Reverse Voltage

1700 V

Montaj Stili

Screw Mounts

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 3mA

Vgs Gatesource Voltage

- 10 V, + 23 V

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 125 C

Power Max

395W (Tc)

Technology

Silicon Carbide (SiC)

Gate Charge Qg Max Vgs

232nC @ 20V

Temel Ürün No

MSCSM120

Configuration

2 N Channel (Phase Leg)

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Vds Drainsource Breakdown Voltage

1200 V

Pd Power Dissipation

395 W

Drain To Source Voltage Vdss

1200V (1.2kV)