MSCSM120VR1M16CT3AG

Specifications

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

16 mOhms

Input Capacitance Ciss Max Vds

6040pF @ 1000V

Ürün Durumu

Active

RoHS

Details

Vgs Th Gatesource Threshold Voltage

2.8 V

Vf Forward Voltage

1.8 V

Rds On Max Id Vgs

16mOhm @ 80A, 20V

Tip

MOSFET Power Module

Current Continuous Drain Id25

173A (Tc)

Vr Reverse Voltage

1700 V

Montaj Stili

Screw Mounts

Vgsth Max Id

2.8V @ 6mA

Ürün Tipi

Discrete Semiconductor Modules

Minimum Operating Temperature

- 40 C

Id Continuous Drain Current

173 A

Vgs Gatesource Voltage

- 10 V, + 23 V

Maks. Çalışma Sıcaklığı

+ 125 C

Paket

Bulk

Technology

Silicon Carbide (SiC)

Power Max

745W (Tc)

Vds Drainsource Breakdown Voltage

1200 V

Pd Power Dissipation

745 W

Drain To Source Voltage Vdss

1200V (1.2kV)

Gate Charge Qg Max Vgs

464nC @ 20V

Temel Ürün No

MSCSM120

Configuration

2 N Channel (Phase Leg)

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)