MSCSM120VR1M11CT6AG

Specifications

Drain To Source Voltage Vdss

1200V (1.2kV)

Vds Drainsource Breakdown Voltage

1200 V

Pd Power Dissipation

1.042 kW

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Gate Charge Qg Max Vgs

696nC @ 20V

Temel Ürün No

MSCSM120

Configuration

2 N Channel (Phase Leg)

Power Max

1.042kW (Tc)

Technology

Silicon Carbide (SiC)

Vgs Gatesource Voltage

- 10 V, + 23 V

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 125 C

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 9mA

Vr Reverse Voltage

1700 V

Montaj Stili

Screw Mounts

Id Continuous Drain Current

251 A

Minimum Operating Temperature

- 40 C

Rds On Drainsource Resistance

10.4 mOhms

Montaj Tipi

Chassis Mount

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Rds On Max Id Vgs

10.4mOhm @ 120A, 20V

Vf Forward Voltage

1.8 V

Vgs Th Gatesource Threshold Voltage

2.8 V

Current Continuous Drain Id25

251A (Tc)

Tip

MOSFET Power Module

Input Capacitance Ciss Max Vds

9000pF @ 1000V

RoHS

Details

Ürün Durumu

Active