MSCSM120VR1M062CT6AG

Specifications

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Configuration

2 N Channel (Phase Leg)

Temel Ürün No

MSCSM120

Gate Charge Qg Max Vgs

1160nC @ 20V

Drain To Source Voltage Vdss

1200V (1.2kV)

Pd Power Dissipation

1.753 kW

Vds Drainsource Breakdown Voltage

1200 V

Power Max

1.753kW (Tc)

Technology

Silicon Carbide (SiC)

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 125 C

Vgs Gatesource Voltage

- 10 V, + 23 V

Id Continuous Drain Current

420 A

Minimum Operating Temperature

- 40 C

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 15mA

Montaj Stili

Screw Mounts

Vr Reverse Voltage

1700 V

Current Continuous Drain Id25

420A (Tc)

Tip

MOSFET Power Module

Rds On Max Id Vgs

6.2mOhm @ 200A, 20V

Vf Forward Voltage

1.8 V

Vgs Th Gatesource Threshold Voltage

2.8 V

RoHS

Details

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

15100pF @ 1000V

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

6.2 mOhms

Fabrika Paket Adedi

1

Kılıf / Paket

Module