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Microchip

JANS2N5796UC

Arrays BJT Transistors

In StockRoHS: Compliant

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Specifications

Ürün Durumu
Active
Transistor Polarity
PNP
Collectoremitter Saturation Voltage
1.6 V
RoHS
N
Transistor Type
2 PNP (Dual)
Tedarikçi Cihaz Paketi
UC
Montaj Tipi
Surface Mount
Configuration
Dual
Technology
Si
Dc Current Gain Hfe Max
300 at 150 mA, 10 V
Fabrika Paket Adedi
1
Collector Emitter Voltage Vceo Max
60 V
Vce Saturation Max Ib Ic
1.6V @ 50mA, 500mA
Voltage Collector Emitter Breakdown Max
60V
Continuous Collector Current
600 mW
Minimum Operating Temperature
- 65 C
Çalışma Sıcaklığı
-65°C ~ 175°C (TJ)
Power Max
600mW
Paket
Bulk
Montaj Stili
SMD/SMT
Current Collector Cutoff Max
10µA (ICBO)
Maks. Çalışma Sıcaklığı
+ 175 C
Ürün Tipi
BJTs - Bipolar Transistors
Currentcollector Ic Max
600mA
Seri
Military, MIL-PRF-19500/496
Pd Power Dissipation
5 W
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA, 10V
Collector Base Voltage Vcbo
60 V
Kılıf / Paket
6-SMD, No Lead
Emitter Base Voltage Vebo
5 V

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