Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Drain Currentmax Abs Id
- 55 A
- Ihs Manufacturer
- MICROSEMI CORP
- Kılıf / Paket
- SP3
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Package Description
- ,
- Gate Charge Qg Max Vgs
- 98nC @ 20V
- Temel Ürün No
- APTMC60
- Çalışma Sıcaklığı
- -40°C ~ 150°C (TJ)
- REACH Uyumluluk Kodu
- compliant
- Input Capacitance Ciss Max Vds
- 1900pF @ 1000V
- Technology
- Silicon Carbide (SiC)
- Risk Rank
- 5.67
- Rohs Code
- Yes
- Ürün Durumu
- Active
- Channel Type
- Dual N
- Power Dissipationmax Abs
- 250 W
- Current Continuous Drain Id25
- 48A (Tc)
- Reflow Temperaturemax S
- NOT SPECIFIED
- Power Max
- 250W
- Continuous Drain Current Id
- 55
- ECCN Kodu
- EAR99
- Üretici Parça No
- APTMC60TLM55CT3AG
- Paket
- Bulk
- Rds On Max Id Vgs
- 49mOhm @ 40A, 20V
- Montaj Tipi
- Chassis Mount
- Operating Temperaturemax
- 125 °C
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Number Of Elements
- 1
- Tedarikçi Cihaz Paketi
- SP3
- Configuration
- 4 N-Channel (Three Level Inverter)
- Vgsth Max Id
- 2.2V @ 2mA (Typ)
- Part Life Cycle Code
- Not Recommended
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