APTMC170AM30CT1AG

Specifications

Tedarikçi Cihaz Paketi

SP1

Power Dissipation

700

Configuration

2 N Channel (Phase Leg)

Vgsth Max Id

2.3V @ 5mA (Typ)

Operating Temperaturemax

150 °C

Polaritychannel Type

N-CHANNEL

Operating Temperaturemin

-40 °C

Montaj Tipi

Chassis Mount

Terminal Pozisyonu

UPPER

Jesd30 Code

R-XUFM-X12

Reflow Temperaturemax S

NOT SPECIFIED

Power Dissipationmax Abs

700 W

Üretici Parça No

U-37768

Paket

Bulk

Transistor Application

SWITCHING

Technology

Silicon Carbide (SiC)

Risk Rank

5.75

Package Shape

RECTANGULAR

Drain Currentmax Id

100 A

Ürün Durumu

Active

Channel Type

Dual N

Terminal Formu

UNSPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Abs Id

100 A

Ihs Manufacturer

MICROSEMI CORP

Kılıf / Paket

SP1

Transistor Element Material

SILICON CARBIDE

Part Life Cycle Code

Active

Number Of Terminals

12

Package Body Material

UNSPECIFIED

Case Connection

ISOLATED

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

30mOhm @ 100A, 20V

Pulsed Drain Currentmax Idm

200 A

Ds Breakdown Voltagemin

1700 V

Power Max

700W

Drainsource On Resistancemax

0.035 Ω

Yüzey Montaj

NO

Current Continuous Drain Id25

100A (Tc)