APTMC120AM55CT1AG

Specifications

Channel Type

Dual N

Ürün Durumu

Active

Drain Currentmax Id

55 A

Package Shape

RECTANGULAR

Risk Rank

5.65

Technology

Silicon Carbide (SiC)

Transistor Application

SWITCHING

Paket

Bulk

Üretici Parça No

APTMC120AM55CT1AG

Power Dissipationmax Abs

250 W

Reflow Temperaturemax S

NOT SPECIFIED

Transistor Element Material

SILICON CARBIDE

Kılıf / Paket

SP1

Ihs Manufacturer

MICROSEMI CORP

Drain Currentmax Abs Id

55 A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

UNSPECIFIED

Vgsth Max Id

2.2V @ 2mA (Typ)

Configuration

2 N-Channel (Half Bridge)

Power Dissipation

250

Tedarikçi Cihaz Paketi

SP1

Jesd30 Code

R-XUFM-X12

Terminal Pozisyonu

UPPER

Montaj Tipi

Chassis Mount

Operating Temperaturemin

-40 °C

Polaritychannel Type

N-CHANNEL

Operating Temperaturemax

125 °C

Rohs Code

Yes

Package Style

FLANGE MOUNT

Continuous Drain Current Id

55

ECCN Kodu

EAR99

Current Continuous Drain Id25

55A (Tc)

Yüzey Montaj

NO

Drainsource On Resistancemax

0.049 Ω

Power Max

250W

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

1200V (1.2kV)

Gate Charge Qg Max Vgs

98nC @ 20V

Temel Ürün No

APTMC120

Package Description

FLANGE MOUNT, R-XUFM-X12