Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Channel Type
- Dual N
- Ürün Durumu
- Active
- Drain Currentmax Id
- 55 A
- Package Shape
- RECTANGULAR
- Risk Rank
- 5.65
- Technology
- Silicon Carbide (SiC)
- Transistor Application
- SWITCHING
- Paket
- Bulk
- Üretici Parça No
- APTMC120AM55CT1AG
- Power Dissipationmax Abs
- 250 W
- Reflow Temperaturemax S
- NOT SPECIFIED
- Transistor Element Material
- SILICON CARBIDE
- Kılıf / Paket
- SP1
- Ihs Manufacturer
- MICROSEMI CORP
- Drain Currentmax Abs Id
- 55 A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Formu
- UNSPECIFIED
- Vgsth Max Id
- 2.2V @ 2mA (Typ)
- Configuration
- 2 N-Channel (Half Bridge)
- Power Dissipation
- 250
- Tedarikçi Cihaz Paketi
- SP1
- Jesd30 Code
- R-XUFM-X12
- Terminal Pozisyonu
- UPPER
- Montaj Tipi
- Chassis Mount
- Operating Temperaturemin
- -40 °C
- Polaritychannel Type
- N-CHANNEL
- Operating Temperaturemax
- 125 °C
- Rohs Code
- Yes
- Package Style
- FLANGE MOUNT
- Continuous Drain Current Id
- 55
- ECCN Kodu
- EAR99
- Current Continuous Drain Id25
- 55A (Tc)
- Yüzey Montaj
- NO
- Drainsource On Resistancemax
- 0.049 Ω
- Power Max
- 250W
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Gate Charge Qg Max Vgs
- 98nC @ 20V
- Temel Ürün No
- APTMC120
- Package Description
- FLANGE MOUNT, R-XUFM-X12
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