Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Chassis Mount
- Terminal Pozisyonu
- UPPER
- Jesd30 Code
- R-XUFM-X12
- Operating Temperaturemax
- 150 °C
- Polaritychannel Type
- N-CHANNEL
- Operating Temperaturemin
- -40 °C
- Tedarikçi Cihaz Paketi
- SP1
- Power Dissipation
- 600
- Configuration
- 2 N Channel (Phase Leg)
- Vgsth Max Id
- 2.3V @ 2mA (Typ)
- Drain Currentmax Abs Id
- 143 A
- Ihs Manufacturer
- MICROSEMI CORP
- Kılıf / Paket
- SP1
- Transistor Element Material
- SILICON CARBIDE
- Terminal Formu
- UNSPECIFIED
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application
- SWITCHING
- Technology
- Silicon Carbide (SiC)
- Risk Rank
- 5.65
- Package Shape
- RECTANGULAR
- Drain Currentmax Id
- 143 A
- Ürün Durumu
- Active
- Channel Type
- Dual N
- Power Dissipationmax Abs
- 600 W
- Paket
- Bulk
- Üretici Parça No
- APTMC120AM20CT1AG
- Ambalaj
- Tube
- Rds On Max Id Vgs
- 17mOhm @ 100A, 20V
- Pulsed Drain Currentmax Idm
- 280 A
- Ds Breakdown Voltagemin
- 1200 V
- RoHS
- Details
- Number Of Terminals
- 12
- Package Body Material
- UNSPECIFIED
- Case Connection
- ISOLATED
- Number Of Elements
- 2
- Part Life Cycle Code
- Not Recommended
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Operating Mode
- ENHANCEMENT MODE
- REACH Uyumluluk Kodu
- compliant
- Çalışma Sıcaklığı
- -40°C ~ 150°C (TJ)
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