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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tedarikçi Cihaz Paketi
- SP6
- Configuration
- 2 N-Channel (Dual)
- Vgsth Max Id
- 4V @ 10mA
- Kurşunsuz Kodu
- Yes
- Moisture Sensitivity Levels
- 1
- Operating Temperaturemax
- 150 °C
- Avalanche Energy Rating Eas
- 3000 mJ
- Polaritychannel Type
- N-CHANNEL
- Montaj Tipi
- Chassis Mount
- Qualification Status
- Not Qualified
- Terminal Pozisyonu
- UPPER
- Jesd30 Code
- R-XUFM-X7
- Reflow Temperaturemax S
- NOT SPECIFIED
- Paket
- Bulk
- Üretici Parça No
- APTM10DUM02G
- Ambalaj
- Tube
- Transistor Application
- SWITCHING
- Additional Feature
- AVALANCHE RATED
- Risk Rank
- 5.23
- Technology
- MOSFET (Metal Oxide)
- Pin Sayısı
- 7
- Package Shape
- RECTANGULAR
- Drain Currentmax Id
- 495 A
- Channel Type
- Dual N
- Ürün Durumu
- Active
- Terminal Formu
- UNSPECIFIED
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Ihs Manufacturer
- MICROSEMI CORP
- Kılıf / Paket
- SP6
- Transistor Element Material
- SILICON
- Part Life Cycle Code
- Active
- Number Of Terminals
- 7
- Package Body Material
- UNSPECIFIED
- Terminal Kaplaması
- TIN SILVER COPPER
- Case Connection
- ISOLATED
- Number Of Elements
- 2
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- RoHS
- Details
- Rds On Max Id Vgs
- 2.5mOhm @ 200A, 10V
- Pulsed Drain Currentmax Idm
- 1900 A
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