APTC90H12SCTG

Specifications

Max Power Dissipation

250 W

Ambalaj

Bulk

Power Dissipation

250 W

Min. Çalışma Sıcaklığı

-40 °C

Ds Breakdown Voltagemin

900 V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Package Shape

RECTANGULAR

Operating Mode

ENHANCEMENT MODE

Input Capacitance

6.8 nF

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Montaj

Chassis Mount, Screw

Package Description

FLANGE MOUNT, R-XUFM-X14

Number Of Terminals

14

Pin Sayısı

14

Avalanche Energy Rating Eas

1940 mJ

Terminal Pozisyonu

UPPER

Part Life Cycle Code

Active

Number Of Elements

4

Continuous Drain Current Id

30 A

Drainsource On Resistancemax

0.12 Ω

Drain To Source Voltage Vdss

900 V

Case Connection

ISOLATED

Qualification Status

Not Qualified

Risk Rank

5.71

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

75 A

Maks. Çalışma Sıcaklığı

150 °C

Drain Currentmax Id

30 A

ECCN Kodu

EAR99

Pin Sayısı

4

Operating Temperaturemax

150 °C

Terminal Formu

UNSPECIFIED

Polaritychannel Type

N-CHANNEL

Transistor Application

SWITCHING

Ihs Manufacturer

MICROSEMI CORP

Package Body Material

UNSPECIFIED

Rds On Max

120 mΩ

Rohs Code

Yes

Gate To Source Voltage Vgs

20 V