APTC90DSK12T1G

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Shape

RECTANGULAR

Min. Çalışma Sıcaklığı

-40 °C

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

2

Continuous Drain Current Id

30 A

Terminal Pozisyonu

UPPER

Turn On Delay Time

70 ns

Drainsource On Resistancemax

0.12 Ω

Drain To Source Voltage Vdss

900 V

Case Connection

ISOLATED

Input Capacitance

6.8 nF

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Power Dissipationmax Abs

250 W

Pin Sayısı

1

Terminal Formu

UNSPECIFIED

Polaritychannel Type

N-CHANNEL

Rad Hardened

No

Maks. Çalışma Sıcaklığı

150 °C

Risk Rank

5.84

REACH Uyumluluk Kodu

compliant

Package Style

FLANGE MOUNT

Yüzey Montaj

NO

Jesd30 Code

R-XUFM-X10

Turn Off Delay Time

400 ns

Gate To Source Voltage Vgs

20 V

Usage Level

Industrial grade

Üretici Parça No

APTC90DSK12T1G

Radyasyon Dayanımı

No

Reflow Temperaturemax S

NOT SPECIFIED

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

30 A

Ds Breakdown Voltagemin

900 V

Max Power Dissipation

250 W

Power Dissipation

250 W

Product Depth Mm

5(mm)

Part Life Cycle Code

Obsolete

Qualification Status

Not Qualified

Screening Level

INDUSTRIALC