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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain Currentmax Abs Id
- 95 A
- Operating Mode
- ENHANCEMENT MODE
- Configuration
- 2 N-Channel (Dual)
- Vgsth Max Id
- 3.9V @ 5mA
- Rds On Max Id Vgs
- 24mOhm @ 47.5A, 10V
- Ds Breakdown Voltagemin
- 600 V
- Power Dissipation
- 462
- Max Power Dissipation
- 462 W
- Qualification Status
- Not Qualified
- Technology
- MOSFET (Metal Oxide)
- Part Life Cycle Code
- Active
- Input Capacitance Ciss Max Vds
- 14400pF @ 25V
- Avalanche Energy Rating Eas
- 1900 mJ
- Pin Sayısı
- 25
- Gate Charge Qg Max Vgs
- 300nC @ 10V
- Number Of Terminals
- 20
- Package Description
- FLANGE MOUNT, R-XUFM-X20
- Montaj
- Chassis Mount, Screw
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Transistor Application
- SWITCHING
- Montaj Tipi
- Chassis Mount
- Operating Temperaturemax
- 150 °C
- Temel Ürün No
- APTC60
- ECCN Kodu
- EAR99
- Drain Currentmax Id
- 95 A
- Rise Time
- 30 ns
- Pulsed Drain Currentmax Idm
- 260 A
- Transistor Element Material
- SILICON
- RoHS
- Details
- Kılıf / Paket
- SP3
- Rohs Code
- Yes
- Channel Type
- Dual N
- Ihs Manufacturer
- MICROSEMI CORP
- Package Body Material
- UNSPECIFIED
- Rds On Max
- 24 mΩ
- Package Shape
- RECTANGULAR
- Seri
- *
- Ürün Tipi
- Discrete Semiconductor Modules
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Min. Çalışma Sıcaklığı
- -40 °C
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