Volume pricing
- 1+ pcs$8.57
- 10+ pcs$8.08
- 100+ pcs$7.62
- 500+ pcs$7.19
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Switching Energy
- 2.5mJ (on), 2.14mJ (off)
- Igbt Type
- Trench Field Stop
- Test Conditions
- 400V, 75A, 1Ohm, 15V
- Current Collector Pulsed Icm
- 225 A
- Maximum Gate Emitter Voltage
- - 30 V, + 30 V
- Td Onoff25c
- 47ns/385ns
- Technology
- Si
- Continuous Collector Current At25 C
- 155 A
- Ambalaj
- Tube
- Tedarikçi Cihaz Paketi
- D3PAK
- Vceon Max Vge Ic
- 1.85V @ 15V, 75A
- Minimum Operating Temperature
- - 55 C
- Reverse Recovery Time Trr
- 25 ns
- Collectoremitter Saturation Voltage
- 1.45 V
- Configuration
- Single
- Ürün Tipi
- IGBT Transistors
- Seri
- *
- Paket
- Tape & Reel (TR)
- Collector Emitter Voltage Vceo Max
- 600 V
- Montaj Stili
- SMD/SMT
- Ürün Durumu
- Active
- Giriş Tipi
- Standard
- Currentcollector Ic Max
- 155 A
- RoHS
- Details
- Power Max
- 536 W
- Kılıf / Paket
- D3PAK-3
- Voltage Collector Emitter Breakdown Max
- 600 V
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Maks. Çalışma Sıcaklığı
- + 175 C
- Temel Ürün No
- APT75GN60
- Gateemitter Leakage Current
- 600 nA
- Fabrika Paket Adedi
- 1
- Montaj Tipi
- Surface Mount
- Gate Charge
- 485 nC
- Pd Power Dissipation
- 536 W
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